Prominent Ultraviolet Photovoltaic Detector Based on Poly (3-hexylthiophene) and ZnO Quantum Dots

H. X. Yang, X. Fang, J. W. Huang, X. X. Luo, Y. Xu, D. R. Wu

Baoshan University of technology, Baoshan 678000, China

Cite this paper
H. X. Yang, X. Fang, J. W. Huang, X. X. Luo, Y. Xu, D. R. Wu, “Prominent Ultraviolet Photovoltaic Detector Based on Poly (3-hexylthiophene) and ZnO Quantum Dots”, Journal of Mechanical Engineering Research and Developments, vol. 39, no. 1, pp. 57-61, 2016. DOI: 10.7508/jmerd.2016.01.009

ABSTRACT: Ultraviolet photovoltaic (UV) photodetector is a kind of important optoelectronic devices that has vital applications in both scientific and engineering fields. The development of UV photodetectors has been impeded because of lacking stable p-type wide-gap semiconductor which is crucial for high-performance, low-cost, large-area UV photovoltaic detector. In this paper, we report a novel UV photovoltaic detector fabricated using poly (3-hexylthiophene) (P3HT) as a sole photoactive material. The highest detectivity (D*) reaches 5.94×1010 cm Hz1/2/W at 1.5 V bias voltage at room temperature under 365 nm illumination. The physical, optical, electrical, and photovoltaic properties, including TEM, Raman, I-V, C-V, and photoresponse have been systematically investigated to disclose the internal mechanism. The present study paves the way for developing high-performance, low-cost UV focal plane array detectors.

Keywords : P3HT; ZnO quantum dots; UV photovoltaic detector.

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